Semiconductor Devices Theory and Application
The goal of this text, as its name implies, is to allow the reader to become proficient in the analysis and design of circuits utilizing discrete semiconductor devices. It progresses from basic diodes through bipolar and field effect transistors. The text is intended for use in a first or second yea...
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| Format: | Electronic eBook |
| Language: | English |
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[Place of publication not identified]
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[2018]
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| Series: | Open textbook library.
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| Subjects: | |
| Online Access: | Access online version |
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| 006 | m o d s | ||
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| 008 | 180907s2018 mnu o 0 0 eng d | ||
| 020 | |a 9781796543537 | ||
| 040 | |a MnU |b eng |c MnU | ||
| 050 | 4 | |a TA145 | |
| 050 | 4 | |a TK1 | |
| 100 | 1 | |a Fiore, James M. |e author | |
| 245 | 0 | 0 | |a Semiconductor Devices |b Theory and Application |c James Fiore |
| 264 | 2 | |a Minneapolis, MN |b Open Textbook Library | |
| 264 | 1 | |a [Place of publication not identified] |b dissidents |c [2018] | |
| 264 | 4 | |c ©2018. | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 0 | |a Open textbook library. | |
| 505 | 0 | |a Chapter 1: Semiconductor Fundamentals -- 1.0 Chapter Objectives -- 1.1 Introduction -- 1.2 Atomic Structure -- 1.3 Crystals -- 1.4 Doped Materials -- Summary -- Chapter 2: PN Junctions and Diodes -- 2.0 Chapter Objectives -- 2.1 Introduction -- 2.2 The PN Junction -- 2.3 Diode Data Sheet Interpretation -- 2.4 Diode Circuit Models -- 2.5 Other Types of Diodes -- Summary -- Chapter 3: Diode Applications -- 3.0 Chapter Objectives -- 3.1 Introduction -- 3.2 Rectification -- 3.3 Clippers -- 3.4 Clampers -- Summary -- Chapter 4: Bipolar Junction Transistors (BJTs) -- 4.0 Chapter Objectives -- 4.1 Introduction -- 4.2 The Bipolar Junction Transistor -- 4.3 BJT Collector Curves -- 4.4 BJT Data Sheet Interpretation -- 4.5 Ebers-Moll Model -- 4.6 DC Load Lines -- 4.7 BJT Switching and Driver Applications -- Summary -- Chapter 5: BJT Biasing -- 5.0 Chapter Objectives -- 5.1 Introduction -- 5.2 The Need For Biasing -- 5.3 Two-Supply Emitter Bias -- 5.4 Voltage Divider Bias -- 5.5 Feedback Biasing -- Summary -- Chapter 6: Amplifier Concepts -- 6.0 Chapter Objectives -- 6.1 Introduction -- 6.2 Amplifier Model -- 6.3 Compliance and Distortion -- 6.4 Frequency Response and Noise -- 6.5 Miller's Theorem -- Summary -- Chapter 7: BJT Small Signal Amplifiers -- 7.0 Chapter Objectives -- 7.1 Introduction -- 7.2 Simplified AC Model of the BJT -- 7.3 Common Emitter Amplifier -- 7.4 Common Collector Amplifier -- 7.5 Common Base Amplifier -- 7.6 Multi-Stage Amplifiers -- Summary -- Chapter 8: BJT Class A Power Amplifiers -- 8.0 Chapter Objectives -- 8.1 Introduction -- 8.2 Amplifier Classes -- 8.3 Class A Operation and Load Lines -- 8.4 Loudspeakers -- 8.5 Power Transistor Data Sheet Interpretation -- 8.6 Heat Sinks -- Summary -- Chapter 9: BJT Class B Power Amplifiers -- 9.0 Chapter Objectives -- 9.1 Introduction -- 9.2 The Class B Configuration -- 9.3 Extensions and Refinements -- Summary -- Chapter 10: Junction Field Effect Transistors (JFETs) -- 10.0 Chapter Objectives -- 10.1 Introduction -- 10.2 JFET Internals -- 10.3 JFET Data Sheet Interpretation -- 10.4 JFET Biasing -- Summary -- Chapter 11: JFET Small Signal Amplifiers -- 11.0 Chapter Objectives -- 11.1 Introduction -- 11.2 Simplified AC Model of the JFET -- 11.3 Common Source Amplifier -- 11.4 Common Drain Amplifier -- 11.5 Multi-stage and Combination Circuits -- 11.6 Ohmic Region Operation -- Summary -- Chapter 12: Metal Oxide Semiconductor FETs (MOSFETs) -- 12.0 Chapter Objectives -- 12.1 Introduction -- 12.2 The DE-MOSFET -- 12.3 DE-MOSFET Biasing -- 12.4 The E-MOSFET -- 12.5 E-MOSFET Data Sheet Interpretation -- 12.6 E-MOSFET Biasing -- Summary -- Chapter 13: MOSFET Small Signal Amplifiers -- 13.0 Chapter Objectives -- 13.1 Introduction -- 13.2 MOSFET Common Source Amplifiers -- 13.3 MOSFET Common Drain Followers -- Summary -- Chapter 14: Class D Power Amplifiers -- 14.0 Chapter Objectives -- 14.1 Introduction -- 14.2 Class D Basics -- 14.3 Pulse Width Modulation -- 14.4 Output Configurations -- Summary -- Chapter 15: Insulated Gate Bipolar Transistors (IGBTs) -- 15.0 Chapter Objectives -- 15.1 Introduction -- 15.2 IGBT Internals -- 15.3 IGBT Data Sheet Interpretation -- 15.4 IGBT Applications -- Summary | |
| 520 | 0 | |a The goal of this text, as its name implies, is to allow the reader to become proficient in the analysis and design of circuits utilizing discrete semiconductor devices. It progresses from basic diodes through bipolar and field effect transistors. The text is intended for use in a first or second year course on semiconductors at the Associate or Baccalaureate level. In order to make effective use of this text, students should have already taken coursework in basic DC and AC circuits, and have a solid background in algebra and trigonometry along with exposure to phasors. Calculus is used in certain sections of the text but for the most part it is used for equation derivations and proofs, and is kept to a minimum. For students without a calculus background these sections may be skipped without a loss of continuity. There is also a lab manual for this textbook. | |
| 542 | 1 | |f Attribution-NonCommercial-ShareAlike | |
| 546 | |a In English. | ||
| 588 | 0 | |a Description based on print resource | |
| 650 | 0 | |a Engineering and Technology |v Textbooks | |
| 650 | 0 | |a Electrical Engineering |v Textbooks | |
| 710 | 2 | |a Open Textbook Library |e distributor | |
| 856 | 4 | 0 | |u https://open.umn.edu/opentextbooks/textbooks/573 |z Access online version |