Recent Advances in III-Nitride Semiconductors

Recent Advances in III-Nitride Semiconductors

Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on "...

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Bibliographic Details
Other Authors: Chen, Peng (Editor), Chen, Zhizhong (Editor)
Format: Electronic Book Chapter
Language:English
Published: MDPI - Multidisciplinary Digital Publishing Institute 2023
Subjects:
Technology: general issues
History of engineering & technology
Nitrides
GaN
AlGaN
InGaN
heterostructures
epitaxy
electro-optics devices
micro-electronics devices
power devices
tunable devices
photonic crystal enhanced light-matter interaction
photonic crystal and plasmonics
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Summary:Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on "Recent Advances in III-Nitride Semiconductors" provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures; GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics.
Physical Description:1 electronic resource (236 p.)
ISBN:books978-3-0365-8625-0
9783036586243
9783036586250
Access:Open Access

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