Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors
This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...
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| Main Author: | |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
KIT Scientific Publishing
2006
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| Subjects: | |
| Online Access: | DOAB: download the publication DOAB: description of the publication |
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| Summary: | This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. |
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| Physical Description: | 1 electronic resource (VI, 132 p. p.) |
| ISBN: | KSP/1000004373 3866440219 |
| Access: | Open Access |