Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors

• Autor principal: Schneider, Karl (auth)
• Formato: Electrónico Capítulo de libro
• Lenguaje: inglés
• Publicado: KIT Scientific Publishing 2006
• Materias: Technology: general issues; bipolar transistor amplifier; transistor optimization; transistor model; distributed amplifier; hetojunction bipolar transistor
• Acceso en línea: DOAB: download the publication; DOAB: description of the publication

This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...