Recent Advances in Novel Materials for Future Spintronics

As we all know, electrons carry both charge and spin. The processing of information in conventional electronic devices is based only on the charge of electrons. Spin electronics, or spintronics, uses the spin of electrons, as well as their charge, to process information. Metals, semiconductors, and...

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Bibliographic Details
Main Author: Wang, Xiaotian (auth)
Other Authors: Chen, Hong (auth), Khenata, Rabah (auth)
Format: Electronic Book Chapter
Language:English
Published: MDPI - Multidisciplinary Digital Publishing Institute 2019
Subjects:
Online Access:DOAB: download the publication
DOAB: description of the publication
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520 |a As we all know, electrons carry both charge and spin. The processing of information in conventional electronic devices is based only on the charge of electrons. Spin electronics, or spintronics, uses the spin of electrons, as well as their charge, to process information. Metals, semiconductors, and insulators are the basic materials that constitute the components of electronic devices, and these types of materials have been transforming all aspects of society for over a century. In contrast, magnetic metals, half-metals (including zero-gap half-metals), magnetic semiconductors (including spin-gapless semiconductors), dilute magnetic semiconductors, and magnetic insulators are the materials that will form the basis for spintronic devices. This book aims to collect a range of papers on novel materials that have intriguing physical properties and numerous potential practical applications in spintronics. 
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653 |a quaternary Heusler alloy 
653 |a electronic structure 
653 |a Prussian blue analogue 
653 |a first-principles calculations 
653 |a first-principles calculation 
653 |a magnetic anisotropy 
653 |a pressure 
653 |a Nb (100) surface 
653 |a Dzyaloshinskii-Moriya interaction 
653 |a optical properties 
653 |a skyrmion 
653 |a equiatomic quaternary Heusler compounds 
653 |a Heusler alloy 
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653 |a H adsorption 
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653 |a lattice dynamics 
653 |a spin gapless semiconductor 
653 |a first-principle calculations 
653 |a half-metallicity 
653 |a bulk CrSi2 
653 |a covalent hybridization 
653 |a H diffusion 
653 |a electronic property 
653 |a MgBi2O6 
653 |a physical nature 
653 |a Mo doping 
653 |a phase stability 
653 |a mechanical anisotropy 
653 |a quaternary Heusler compound 
653 |a magnetic properties 
653 |a exchange energy 
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