Thin Film Transistor
Recently, new wide-band energy gap semiconductors can be grown by ALD, PLD, sputtering, or MOCVD. They have great potential for the fabrication and application to TFTs. Inorganic semiconductors have good stability against environmental degradation over their organic counterparts, whereas organic mat...
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| Main Author: | |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
MDPI - Multidisciplinary Digital Publishing Institute
2019
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| Online Access: | DOAB: download the publication DOAB: description of the publication |
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| 245 | 1 | 0 | |a Thin Film Transistor |
| 260 | |b MDPI - Multidisciplinary Digital Publishing Institute |c 2019 | ||
| 300 | |a 1 electronic resource (108 p.) | ||
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| 520 | |a Recently, new wide-band energy gap semiconductors can be grown by ALD, PLD, sputtering, or MOCVD. They have great potential for the fabrication and application to TFTs. Inorganic semiconductors have good stability against environmental degradation over their organic counterparts, whereas organic materials are usually flexible, transparent, and when solution-processed at low temperatures, are prone to degradation when exposed to heat, moisture, and oxygen. For this Special Issue, we invited researchers to submit papers discussing the development of new functional and smart materials, and inorganic as well as organic semiconductor materials, such as ZnO, InZnO, GaO, AlGaO, AnGaO, AlN/GaN, conducting polymers, molecular semiconductors, perovskite-based materials, carbon nanotubes, carbon nanotubes/polymer composites, and 2D materials (e.g., graphene, MoS2) and their potential applications in display drivers, radio frequency identification tags, e-paper, gas, chemical and biosensors, to name but a few. | ||
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| 653 | |a charge transport and injection mechanisms | ||
| 653 | |a optical synaptic devices | ||
| 653 | |a flat panel displays | ||
| 653 | |a simulation | ||
| 653 | |a persistent photoconductivity | ||
| 653 | |a hydrogen | ||
| 653 | |a interdigitated | ||
| 653 | |a interface state trap density | ||
| 653 | |a technology computer aided design (TCAD) | ||
| 653 | |a oxygen defects | ||
| 653 | |a Corbino | ||
| 653 | |a transistor model evaluation | ||
| 653 | |a metal-halide lamp | ||
| 653 | |a InGaZnOx | ||
| 653 | |a contact resistances | ||
| 653 | |a chemical treatment | ||
| 653 | |a colour difference | ||
| 653 | |a organic transistor | ||
| 653 | |a equivalent circuit | ||
| 653 | |a channel-length dependence | ||
| 653 | |a just noticeable difference | ||
| 653 | |a oxide semiconductor | ||
| 653 | |a OTFT | ||
| 653 | |a chromaticity | ||
| 653 | |a modeling contact effects | ||
| 653 | |a oxygen deficiency | ||
| 653 | |a dual-threshold inverter | ||
| 653 | |a surface treated | ||
| 653 | |a charge-carrier-mobility extraction | ||
| 653 | |a optical detecting | ||
| 653 | |a thin film transistor | ||
| 653 | |a green | ||
| 653 | |a photo-sensors | ||
| 653 | |a modelling | ||
| 653 | |a capacitor | ||
| 653 | |a TFT-LCD | ||
| 653 | |a organic thin-film transistor | ||
| 653 | |a spectrum | ||
| 653 | |a hydrogen effect | ||
| 653 | |a organic film growth | ||
| 653 | |a transparent conducting oxides | ||
| 653 | |a quartz-halogen lamp | ||
| 653 | |a optical | ||
| 653 | |a blue LED | ||
| 856 | 4 | 0 | |a www.oapen.org |u https://mdpi.com/books/pdfview/book/1567 |7 0 |z DOAB: download the publication |
| 856 | 4 | 0 | |a www.oapen.org |u https://directory.doabooks.org/handle/20.500.12854/60888 |7 0 |z DOAB: description of the publication |