Wide Bandgap Semiconductor Based Micro/Nano Devices

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key...

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Bibliographic Details
Main Author: Seo, Jung-Hun (auth)
Format: Electronic Book Chapter
Language:English
Published: MDPI - Multidisciplinary Digital Publishing Institute 2019
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LEADER 00000naaaa2200000uu 4500
001 doab_20_500_12854_62681
005 20210212
003 oapen
006 m o d
007 cr|mn|---annan
008 20210212s2019 xx |||||o ||| 0|eng d
020 |a books978-3-03897-843-5 
020 |a 9783038978435 
020 |a 9783038978428 
040 |a oapen  |c oapen 
024 7 |a 10.3390/books978-3-03897-843-5  |c doi 
041 0 |a eng 
042 |a dc 
072 7 |a TBX  |2 bicssc 
100 1 |a Seo, Jung-Hun  |4 auth 
245 1 0 |a Wide Bandgap Semiconductor Based Micro/Nano Devices 
260 |b MDPI - Multidisciplinary Digital Publishing Institute  |c 2019 
300 |a 1 electronic resource (138 p.) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
506 0 |a Open Access  |2 star  |f Unrestricted online access 
520 |a While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices. 
540 |a Creative Commons  |f https://creativecommons.org/licenses/by-nc-nd/4.0/  |2 cc  |4 https://creativecommons.org/licenses/by-nc-nd/4.0/ 
546 |a English 
650 7 |a History of engineering & technology  |2 bicssc 
653 |a ohmic contact 
653 |a n/a 
653 |a MESFET 
653 |a optical band gap 
653 |a wide-bandgap semiconductor 
653 |a annealing temperature 
653 |a junction termination extension (JTE) 
653 |a channel length modulation 
653 |a silicon carbide (SiC) 
653 |a amorphous InGaZnO (a-IGZO) 
653 |a light output power 
653 |a GaN 
653 |a electrochromism 
653 |a large signal performance 
653 |a passivation layer 
653 |a 4H-SiC 
653 |a positive gate bias stress (PGBS) 
653 |a asymmetric power combining 
653 |a ultrahigh upper gate height 
653 |a high electron mobility transistors 
653 |a space application 
653 |a gallium nitride (GaN) 
653 |a phase balance 
653 |a edge termination 
653 |a distributed Bragg reflector 
653 |a cathode field plate (CFP) 
653 |a ammonothermal GaN 
653 |a anode field plate (AFP) 
653 |a W band 
653 |a GaN high electron mobility transistor (HEMT) 
653 |a 1T DRAM 
653 |a growth of GaN 
653 |a tungsten trioxide film 
653 |a thin-film transistor (TFT) 
653 |a micron-sized patterned sapphire substrate 
653 |a power added efficiency 
653 |a T-anode 
653 |a analytical model 
653 |a AlGaN/GaN 
653 |a harsh environment 
653 |a high-temperature operation 
653 |a amplitude balance 
653 |a buffer layer 
653 |a characteristic length 
653 |a Ku-band 
653 |a DIBL effect 
653 |a I-V kink effect 
653 |a flip-chip light-emitting diodes 
653 |a high electron mobility transistors (HEMTs) 
653 |a power amplifier 
653 |a sidewall GaN 
653 |a external quantum efficiency 
653 |a breakdown voltage (BV) 
653 |a threshold voltage (Vth) stability 
653 |a regrown contact 
653 |a AlGaN/GaN HEMT 
653 |a TCAD 
653 |a high electron mobility transistor (HEMT) 
856 4 0 |a www.oapen.org  |u https://mdpi.com/books/pdfview/book/1265  |7 0  |z DOAB: download the publication 
856 4 0 |a www.oapen.org  |u https://directory.doabooks.org/handle/20.500.12854/62681  |7 0  |z DOAB: description of the publication