Physics and Technology of Silicon Carbide Devices
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for materia...
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| Otros Autores: | |
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| Formato: | Electrónico Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2012
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| Materias: | |
| Acceso en línea: | DOAB: download the publication DOAB: description of the publication |
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| Sumario: | Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness. |
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| Descripción Física: | 1 electronic resource (414 p.) |
| ISBN: | 3428 9789535109174 9789535162834 |
| Acceso: | Open Access |