Miniaturized Silicon Photodetectors New Perspectives and Applications

Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, pho...

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Bibliographic Details
Other Authors: Casalino, Maurizio (Editor)
Format: Electronic Book Chapter
Language:English
Published: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
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DOAB: description of the publication
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520 |a Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a "zero change" CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications. 
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650 7 |a Technology: general issues  |2 bicssc 
653 |a graphene 
653 |a polycrystalline silicon 
653 |a photodiode 
653 |a phototransistor 
653 |a pixel 
653 |a high dynamic range (HDR) image 
653 |a Ni/4H-SiC Schottky barrier diodes (SBDs) 
653 |a C/Si ratios 
653 |a 1/f noise 
653 |a resonant cavity 
653 |a photodetectors 
653 |a near-infrared 
653 |a silicon 
653 |a p-Si/i-ZnO/n-AZO 
653 |a avalanche photodiode (APD) 
653 |a impact ionization coefficients 
653 |a GeSn alloys 
653 |a silicon photonics 
653 |a photonic integrated circuits 
653 |a microbolometer 
653 |a complementary metal oxide semiconductor (CMOS)-compatible 
653 |a uncooled infrared detectors 
653 |a thermal detectors 
653 |a infrared focal plane array (IRFPA) 
653 |a read-out integrated circuit (ROIC) 
653 |a photodetector 
653 |a semiconductor 
653 |a microphotonics 
653 |a group IV 
653 |a colloidal systems 
653 |a single-photon avalanche diode (SPAD) 
653 |a gating 
653 |a avalanche transients 
653 |a 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) 
653 |a n/a 
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