SiC based Miniaturized Devices

• Andere auteurs: Saddow, Stephen Edward (Redacteur), Alquier, Daniel (Redacteur), Wang, Jing (Redacteur), La Via, Francesco (Redacteur), Fraga, Mariana (Redacteur)
• Formaat: Elektronisch Hoofdstuk
• Taal: Engels
• Gepubliceerd in: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2020
• Onderwerpen: History of engineering & technology; high-power impulse magnetron sputtering (HiPIMS); silicon carbide; aluminum nitride; thin film; Rutherford backscattering spectrometry (RBS); grazing incidence X-ray diffraction (GIXRD); Raman spectroscopy; 6H-SiC; indentation; deformation; material removal mechanisms; critical load; 4H-SiC; critical depth of cut; Berkovich indenter; cleavage strength; nanoscratching; power electronics; high-temperature converters; MEMS devices; SiC power electronic devices; neural interface; neural probe; neural implant; microelectrode array; MEA; SiC; 3C-SiC; doped SiC; n-type; p-type; amorphous SiC; epitaxial growth; electrochemical characterization; MESFET; simulation; PAE; bulk micromachining; electrochemical etching; circular membrane; bulge test; vibrometry; mechanical properties; Young's modulus; residual stress; FEM; semiconductor radiation detector; microstrip detector; power module; negative gate-source voltage spike; 4H-SiC, epitaxial layer; Schottky barrier; radiation detector; point defects; deep level transient spectroscopy (DLTS); thermally stimulated current spectroscopy (TSC); electron beam induced current spectroscopy (EBIC); pulse height spectroscopy (PHS); n/a
• Online toegang: DOAB: download the publication; DOAB: description of the publication

MEMS devices are found in many of today's electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks...