Fundamentals and Recent Advances in Epitaxial Graphene on SiC
This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matte...
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| Other Authors: | , |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
Basel, Switzerland
MDPI - Multidisciplinary Digital Publishing Institute
2021
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| Subjects: | |
| Online Access: | DOAB: download the publication DOAB: description of the publication |
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| 700 | 1 | |a Shtepliuk, Ivan |4 edt | |
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| 700 | 1 | |a Shtepliuk, Ivan |4 oth | |
| 245 | 1 | 0 | |a Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
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| 300 | |a 1 electronic resource (94 p.) | ||
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| 506 | 0 | |a Open Access |2 star |f Unrestricted online access | |
| 520 | |a This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications. | ||
| 540 | |a Creative Commons |f https://creativecommons.org/licenses/by/4.0/ |2 cc |4 https://creativecommons.org/licenses/by/4.0/ | ||
| 546 | |a English | ||
| 650 | 7 | |a Technology: general issues |2 bicssc | |
| 653 | |a epitaxial graphene | ||
| 653 | |a copper | ||
| 653 | |a redox reaction | ||
| 653 | |a electrodeposition | ||
| 653 | |a voltammetry | ||
| 653 | |a chronoamperometry | ||
| 653 | |a DFT | ||
| 653 | |a silicon carbide | ||
| 653 | |a Raman spectroscopy | ||
| 653 | |a 2D peak line shape | ||
| 653 | |a G peak | ||
| 653 | |a charge density | ||
| 653 | |a strain | ||
| 653 | |a atomic layer deposition | ||
| 653 | |a high-k insulators | ||
| 653 | |a ion implantation | ||
| 653 | |a Raman | ||
| 653 | |a AFM | ||
| 653 | |a XPS | ||
| 653 | |a graphene | ||
| 653 | |a SiC | ||
| 653 | |a 3C-SiC on Si | ||
| 653 | |a substrate interaction | ||
| 653 | |a carrier concentration | ||
| 653 | |a mobility | ||
| 653 | |a intercalation | ||
| 653 | |a buffer layer | ||
| 653 | |a surface functionalization | ||
| 653 | |a twistronics | ||
| 653 | |a twisted bilayer graphene | ||
| 653 | |a flat band | ||
| 653 | |a epitaxial graphene on SiC | ||
| 653 | |a quasi-free-standing graphene | ||
| 653 | |a monolayer graphene | ||
| 653 | |a high-temperature sublimation | ||
| 653 | |a terahertz optical Hall effect | ||
| 653 | |a free charge carrier properties | ||
| 653 | |a sublimation | ||
| 653 | |a electronic properties | ||
| 653 | |a material engineering | ||
| 653 | |a deposition | ||
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| 856 | 4 | 0 | |a www.oapen.org |u https://directory.doabooks.org/handle/20.500.12854/76348 |7 0 |z DOAB: description of the publication |