Magnetic and Spin Devices

As the scaling of electronic semiconductor devices displays signs of saturation, the main focus of research in microelectronics is shifting towards finding new computing paradigms. Electron spin offers additional functionality to digital charge-based devices. Several fundamental problems, including...

সম্পূর্ণ বিবরণ

সংরক্ষণ করুন:
গ্রন্থ-পঞ্জীর বিবরন
অন্যান্য লেখক: Sverdlov, Viktor (সম্পাদক), Jutong, Nuttachai (সম্পাদক)
বিন্যাস: বৈদ্যুতিক গ্রন্থের অধ্যায়
ভাষা:ইংরেজি
প্রকাশিত: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
বিষয়গুলি:
অনলাইন ব্যবহার করুন:DOAB: download the publication
DOAB: description of the publication
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LEADER 00000naaaa2200000uu 4500
001 doab_20_500_12854_81001
005 20220506
003 oapen
006 m o d
007 cr|mn|---annan
008 20220506s2022 xx |||||o ||| 0|eng d
020 |a books978-3-0365-3841-9 
020 |a 9783036538426 
020 |a 9783036538419 
040 |a oapen  |c oapen 
024 7 |a 10.3390/books978-3-0365-3841-9  |c doi 
041 0 |a eng 
042 |a dc 
072 7 |a GP  |2 bicssc 
072 7 |a PH  |2 bicssc 
100 1 |a Sverdlov, Viktor  |4 edt 
700 1 |a Jutong, Nuttachai  |4 edt 
700 1 |a Sverdlov, Viktor  |4 oth 
700 1 |a Jutong, Nuttachai  |4 oth 
245 1 0 |a Magnetic and Spin Devices 
260 |a Basel  |b MDPI - Multidisciplinary Digital Publishing Institute  |c 2022 
300 |a 1 electronic resource (84 p.) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
506 0 |a Open Access  |2 star  |f Unrestricted online access 
520 |a As the scaling of electronic semiconductor devices displays signs of saturation, the main focus of research in microelectronics is shifting towards finding new computing paradigms. Electron spin offers additional functionality to digital charge-based devices. Several fundamental problems, including spin injection to a semiconductor, spin propagation and relaxation, and spin manipulation by the gate voltage, have been successfully resolved to open a path towards spin-based reprogrammable electron switches. Devices employing electron spin are nonvolatile; they are able to preserve the stored information without external power. Emerging nonvolatile devices are electrically addressable, possess a simple structure, and offer endurance and speed superior to flash memory. Having nonvolatile memory very close to CMOS offers a prospect of data processing in the nonvolatile segment, where the same devices are used to store and process the information. This opens perspectives for conceptually new low-power computing paradigms within Artificial Intelligence of Things (AIoT). This Special Issue focuses on all topics related to spintronic devices such as spin-based switches, magnetoresistive memories, energy harvesting devices, and sensors that can be employed in in-memory computing concepts and in Artificial Intelligence. 
540 |a Creative Commons  |f https://creativecommons.org/licenses/by/4.0/  |2 cc  |4 https://creativecommons.org/licenses/by/4.0/ 
546 |a English 
650 7 |a Research & information: general  |2 bicssc 
650 7 |a Physics  |2 bicssc 
653 |a magnetic contacts 
653 |a reliability 
653 |a practical tests 
653 |a reaction distance 
653 |a extreme conditions 
653 |a spin-orbit torque MRAM 
653 |a reinforcement learning 
653 |a two-pulse switching scheme 
653 |a magnetic field-free switching 
653 |a machine learning 
653 |a torque 
653 |a the calculation in memory 
653 |a automation 
653 |a magnetic recording 
653 |a magnetic read heads 
653 |a current perpendicular-to-the-plane giant magnetoresistance 
653 |a Heusler alloys 
653 |a bit-patterned media 
653 |a exchange-coupled-composite media 
653 |a microwave-assisted magnetic recording 
653 |a hysteresis loop 
653 |a combined spin-transfer torque (STT) and spin-orbit torque (SOT) switching 
653 |a field like torque 
653 |a damping like torque 
653 |a magnetic tunnel junction 
653 |a n/a 
856 4 0 |a www.oapen.org  |u https://mdpi.com/books/pdfview/book/5342  |7 0  |z DOAB: download the publication 
856 4 0 |a www.oapen.org  |u https://directory.doabooks.org/handle/20.500.12854/81001  |7 0  |z DOAB: description of the publication