High-Density Solid-State Memory Devices and Technologies

• Altres autors: Monzio Compagnoni, Christian (Editor), Shirota, Riichiro (Editor)
• Format: Electrònic Capítol de llibre
• Idioma: anglès
• Publicat: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
• Matèries: Technology: general issues; History of engineering & technology; resistive switching memory; in-memory computing; crosspoint array; artificial intelligence; deep learning; dielectric; RTN; TAT; Wiener-Khinchin; transient analysis; phonon; surface roughness; spectral index; power spectrum; program suspend; 3D NAND Flash; Solid State Drives; MOSFET; low-frequency noise; random telegraph noise; evaluation method; array test pattern; STT-MRAM; spintronics; CoFeB; composite free layer; low power electronics; NAND Flash memory; endurance; reliability; oxide trapped charge; artificial neural networks; neuromorphic computing; NOR Flash memory arrays; program noise; pulse-width modulation; 3D NAND; floating gate cell; charge-trap cell; CMOS under array; bumpless; TSV; WOW; COW; BBCube; bandwidth; yield; power consumption; thermal management; n/a
• Accés en línia: DOAB: download the publication; DOAB: description of the publication

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories thei...