Electronic Nanodevices

• Autres auteurs: Bartolomeo, Antonio (Éditeur intellectuel)
• Format: Électronique Chapitre de livre
• Langue: anglais
• Publié: MDPI - Multidisciplinary Digital Publishing Institute 2022
• Sujets: Technology: general issues; History of engineering & technology; concentrator systems; GaInP/GaInAs/Ge; multi-junction; photovoltaics; solar cells; space; triple-junction; FeFET; ferroelectric; nonvolatile; semiconductor memory; SBT; nanoantennas; optics; optoelectronic devices; photovoltaic technology; rectennas; resistive memories; thermal model; heat equation; thermal conductivity; circuit simulation; compact modeling; resistive switching; nanodevices; power conversion efficiency; MXenes; electrodes; additives; HTL/ETL; design of experiments; GFET; graphene; high-frequency; RF devices; tolerance analysis; molybdenum oxides; green synthesis; biological chelator; additional capacity; anodes; lithium-ion batteries; carbon nanotube; junctionless; tunnel field effect transistors; chemical doping; electrostatic doping; NEGF simulation; band-to-band tunneling; switching performance; nanoscale; phosphorene; black phosphorus; nanoribbon; edge contact; contact resistance; quantum transport; NEGF; metallization; broadening; zigzag carbon nanotube; armchair-edge graphene nanoribbon; quantum simulation; sub-10 nm; phototransistors; photosensitivity; subthreshold swing; GaN HEMTs; scaling; electron mobility; scattering; polarization charge; 2D materials; rhenium; selenides; ReSe2; field-effect transistor; pressure; negative photoconductivity; n/a
• Accès en ligne: DOAB: download the publication; DOAB: description of the publication

The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10...