Synthesis, Properties and Applications of Germanium Chalcogenides

• Muut tekijät: Privitera, Stefania M. S. (Toimittaja)
• Aineistotyyppi: Elektroninen Kirjan osa
• Kieli: englanti
• Julkaistu: MDPI - Multidisciplinary Digital Publishing Institute 2022
• Aiheet: Technology: general issues; Chemical engineering; PCM; Ge2Sb2Te5; sputtering; flexible substrates; crystallization; electrical properties; phase change materials; nitrogen; strain; kinetics; amorphous phase; germanium telluride; indium alloying; optical contrast; Ge-rich alloys; crystallization temperature; segregation; Ge-rich GST alloys; Raman; electronic properties; Ge-rich GST; pulsed laser deposition; phase separation; GGST; EDX elemental chemical mapping; embedded memory; density functional theory; MOCVD; VLS; phase-change memory; nanowires; core-shell; Ge-Sb-Te; Ge-Sb-Te/Sb2Te3; embedded electronic memories; Density Functional Theory; high-throughput calculations
• Linkit: DOAB: download the publication; DOAB: description of the publication

Germanium (Ge) chalcogenides are characterized by unique properties that make these materials interesting for a very wide range of applications from phase change memories to ovonic threshold switches and from photonics to thermoelectric and photovoltaic devices. In many cases, their physical propert...