Graphene for Electronics
Graphene is an allotrope of carbon consisting of a single layer of atoms arranged in a two-dimensional (2D) honeycomb lattice. Graphene's unique properties of thinness and conductivity have led to global research into its applications as a semiconductor. With the ability to well conduct electri...
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Format: | Electronic Book Chapter |
Language: | English |
Published: |
Basel
MDPI - Multidisciplinary Digital Publishing Institute
2022
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Online Access: | DOAB: download the publication DOAB: description of the publication |
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245 | 1 | 0 | |a Graphene for Electronics |
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520 | |a Graphene is an allotrope of carbon consisting of a single layer of atoms arranged in a two-dimensional (2D) honeycomb lattice. Graphene's unique properties of thinness and conductivity have led to global research into its applications as a semiconductor. With the ability to well conduct electricity at room temperature, graphene semiconductors could easily be implemented into the existing semiconductor technologies and, in some cases, successfully compete with the traditional ones, such as silicon. This reprint presents very recent results in the physics of graphene, which can be important for applying the material in electronics. | ||
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546 | |a English | ||
650 | 7 | |a Physics |2 bicssc | |
653 | |a graphene | ||
653 | |a scattering | ||
653 | |a dephasing | ||
653 | |a relaxation time | ||
653 | |a band structure | ||
653 | |a tight-binding model | ||
653 | |a angle-resolved photoemission | ||
653 | |a electron scattering | ||
653 | |a augmented plane waves | ||
653 | |a nanoscroll | ||
653 | |a first-principle | ||
653 | |a Klein tunneling | ||
653 | |a borophene | ||
653 | |a Dirac fermions | ||
653 | |a electric field | ||
653 | |a valence charge density | ||
653 | |a image potential | ||
653 | |a image-plane position | ||
653 | |a image-potential states | ||
653 | |a liquid conductor | ||
653 | |a graphene solution | ||
653 | |a circulating system | ||
653 | |a microfluidic channel | ||
653 | |a temperature | ||
653 | |a optical power | ||
653 | |a CVD graphene | ||
653 | |a polycrystalline | ||
653 | |a grain size | ||
653 | |a single-crystalline grain | ||
653 | |a grain boundary (GB) | ||
653 | |a GB distribution | ||
653 | |a sheet resistance | ||
653 | |a transmission-line model measurement | ||
653 | |a Bose-Einstein condensation | ||
653 | |a superfluidity | ||
653 | |a dipolar exitons | ||
653 | |a low-dimensional semimetals | ||
653 | |a electronic transport in graphene | ||
653 | |a quantum hall effect | ||
653 | |a ion-selective field-effect transistor | ||
653 | |a sodium ions | ||
653 | |a real-time monitoring | ||
653 | |a mechanochemistry | ||
653 | |a graphene nanosheets | ||
653 | |a conductive ink | ||
653 | |a inkjet printing | ||
653 | |a printed electronics | ||
653 | |a n/a | ||
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856 | 4 | 0 | |a www.oapen.org |u https://directory.doabooks.org/handle/20.500.12854/95892 |7 0 |z DOAB: description of the publication |