Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation har...

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Bibliographic Details
Other Authors: Leroux, Paul (Editor)
Format: Electronic Book Chapter
Language:English
Published: Basel MDPI - Multidisciplinary Digital Publishing Institute 2023
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245 1 0 |a Radiation Tolerant Electronics, Volume II 
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520 |a Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects. 
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650 7 |a History of engineering & technology  |2 bicssc 
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653 |a triple modular redundancy 
653 |a 65 nm CMOS technology 
653 |a single event effects 
653 |a radiation hardening by design 
653 |a digital integrated circuits 
653 |a fault injection 
653 |a simulation 
653 |a VHDL 
653 |a open source tools 
653 |a triple modular redundancy TMR 
653 |a time redundancy (TR) 
653 |a TMR/Simplex 
653 |a reliability improvement factor (RIF) 
653 |a half-duty limited DC-DC converter 
653 |a total ionizing dose 
653 |a system-level testing 
653 |a point-of-load converter 
653 |a radiation hardness assurance 
653 |a system qualification 
653 |a All-Digital 
653 |a PLL 
653 |a CDR 
653 |a Single-Event Effects 
653 |a radiation hardening 
653 |a system-level tests 
653 |a D Flip-Flop 
653 |a heavy ion 
653 |a radiation hardened 
653 |a Single Event Upset 
653 |a D-type flip-flop 
653 |a single event transient 
653 |a single event upset 
653 |a quadrature 
653 |a super-harmonic 
653 |a LC-tank 
653 |a Q-phase 
653 |a VCO 
653 |a QVCO 
653 |a radiation 
653 |a TID 
653 |a SEE 
653 |a X-ray 
653 |a high energy physics 
653 |a radiation hardened by design 
653 |a 22-nm FD SOI 
653 |a 28-nm FD SOI 
653 |a Co-60 
653 |a flip-flop (FF) 
653 |a radiation effects 
653 |a ring oscillator (RO) 
653 |a static random-access memory (SRAM) 
653 |a total ionizing dose (TID) 
653 |a radiation effect 
653 |a radiation test method 
653 |a sensitive area 
653 |a parasitic bipolar amplification 
653 |a processor 
653 |a laser test 
653 |a generalized linear model 
653 |a ensemble method 
653 |a confidence interval 
653 |a double-node upset (DNU) 
653 |a radiation-hardened latch 
653 |a radiation hardening by design (RHBD) 
653 |a single event upset polarity 
653 |a single-node upset (SNU) 
653 |a soft error 
653 |a n/a 
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