CRYSTAL-QUASICHEMICAL ANALYSIS OF DEFECT SUBSYSTEM OF DOPED PbTe: Sb CRYSTALS AND Pb-Sb-Te SOLID SOLUTIONS
<p class="ArticleAnnotation">Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid...
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| Format: | Book |
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Vasyl Stefanyk Precarpathian National University,
2014-05-01T00:00:00Z.
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| Summary: | <p class="ArticleAnnotation">Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid solution formation for РbТе-Sb<sub>2</sub>Те<sub>3</sub>: replacement of antimony ions lead sites with the formation of cation vacancies (I) or neutral interstitial tellurium atoms (II) were examined. Dominant point defects in doped crystals PbTe:Sb and РbТе-Sb<sub>2</sub>Те<sub>3</sub> solid solutions based on p-PbTe were defined. Dependences of concentration of dominant point defects, current carriers and Hall concentration on content of dopant compound and the initial deviation from stoichiometry in the basic matrix were calculated.</p> |
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| Item Description: | 2311-0155 2413-2349 10.15330/jpnu.1.1.55-63 |