Strain-Engineered MOSFETs
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their f...
Enregistré dans:
| Auteur principal: | |
|---|---|
| Autres auteurs: | |
| Format: | Électronique Chapitre de livre |
| Langue: | anglais |
| Publié: |
CRC Press
2012
|
| Sujets: | |
| Accès en ligne: | OAPEN Library: download the publication OAPEN Library: description of the publication |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| Résumé: | This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization. |
|---|---|
| ISBN: | 9781315216577 9781466503472 9781138075603 9781466500556 |
| Accès: | Open Access |