Graphene oxide-based waveguides for enhanced self-phase modulation

<p>The enhanced self-phase modulation (SPM) in silicon nitride (Si3N4) and silicon (Si) waveguides integrated with graphene oxide (GO) films is experimentally demonstrated. By using both picosecond and femtosecond optical pulses, we observe significant spectral broadening in the waveguides due...

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Main Authors: Yuning Zhang (Author), Jiayang Wu (Author), Yang Qu (Author), Linnan Jia (Author), Baohua Jia (Author), David Moss (Author)
Format: Book
Published: Annals of Mathematics and Physics - Peertechz Publications, 2022-08-09.
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001 peertech__10_17352_amp_000048
042 |a dc 
100 1 0 |a Yuning Zhang  |e author 
700 1 0 |a  Jiayang Wu  |e author 
700 1 0 |a  Yang Qu  |e author 
700 1 0 |a  Linnan Jia  |e author 
700 1 0 |a  Baohua Jia  |e author 
700 1 0 |a David Moss  |e author 
245 0 0 |a Graphene oxide-based waveguides for enhanced self-phase modulation 
260 |b Annals of Mathematics and Physics - Peertechz Publications,   |c 2022-08-09. 
520 |a <p>The enhanced self-phase modulation (SPM) in silicon nitride (Si3N4) and silicon (Si) waveguides integrated with graphene oxide (GO) films is experimentally demonstrated. By using both picosecond and femtosecond optical pulses, we observe significant spectral broadening in the waveguides due to the high Kerr nonlinearity of GO films. The maximum broadening factors of up to ~3.4 and ~4.3 are achieved in GO-coated Si3N4 waveguides and GO-coated Si waveguides, respectively. The spectral broadening for femtosecond pulses is more significant than the picosecond pulses, which can be attributed to their relatively high peak power. These results show the strong potential of GO films for improving the Kerr nonlinearity of photonic devices. </p> 
540 |a Copyright © Yuning Zhang et al. 
546 |a en 
655 7 |a Research Article  |2 local 
856 4 1 |u https://doi.org/10.17352/amp.000048  |z Connect to this object online.