Dimensional effect of doped porous ge using SILVACO TCAD simulation for potential optoelectronics application / A.F. Abd Rahim ...[et al.]
Ge is considered to have several advantages over Si due to its high mobility and direct band gap, which makes it ideal for optoelectronic applications. The manipulation of bulk Ge into small structures has drawn a lot of interest due to the numerous distinctive properties caused by the impact of siz...
Saved in:
Main Authors: | Abd Rahim, A.F (Author), Mohamad Shuhaimi, N. S. I. (Author), Mohd Razal, N. S. (Author), Radzali, R. (Author), Mahmood, A. (Author), Hamzah, I.H (Author), Packeer Mohamed, M F (Author) |
---|---|
Format: | Book |
Published: |
Universiti Teknologi MARA Cawangan Pulau Pinang,
2021-08.
|
Subjects: | |
Online Access: | Link Metadata |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
by: Azmi, Azila, et al.
Published: (2022) -
Characterization and fabrication of 90nm strained silicon PMOS using TCAD silvaco / M. A. Abd Hamid and F. Sulaiman
by: Abd Hamid, M. A., et al.
Published: (2012) -
Performance of high-k dielectric material for short channel length MOSFET simulated using silvaco TCAD tools / Fatin Antasha Anizam ... [et al.]
by: Anizam, Fatin Antasha, et al.
Published: (2021) -
Two-Dimensional Electronics and Optoelectronics
by: Zhixian Zhou (Ed.)
Published: (2017) -
Development and simulation via flexsim for kitting trolley design of rear car seat assembly process / A.F. Sarimi ... [et al.]
by: Sarimi, A.F, et al.
Published: (2023)