Effect of EDX accelerating voltage on ZnO thin film doped with sodium / Benedict Wen Cheun Au ... [et al.]
In recent years, owing to its unique properties, ZnO has been researched extensively for a wide range of applications including sensors, transistors and solar cells. In this work, ZnO thin film doped with sodium (ZnO:Na) was characterized using Field Emission-Scanning Electron Microscopy (FESEM) and...
Saved in:
Main Authors: | , , , |
---|---|
Format: | Book |
Published: |
Universiti Teknologi MARA Cawangan Pahang,
2018.
|
Subjects: | |
Online Access: | Link Metadata |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
MARC
LEADER | 00000 am a22000003u 4500 | ||
---|---|---|---|
001 | repouitm_31335 | ||
042 | |a dc | ||
100 | 1 | 0 | |a Wen, Benedict Cheun Au |e author |
700 | 1 | 0 | |a Kah, Yoong Chan |e author |
700 | 1 | 0 | |a Siow, Woon Ng |e author |
700 | 1 | 0 | |a Fong, Kwong Yam |e author |
245 | 0 | 0 | |a Effect of EDX accelerating voltage on ZnO thin film doped with sodium / Benedict Wen Cheun Au ... [et al.] |
260 | |b Universiti Teknologi MARA Cawangan Pahang, |c 2018. | ||
500 | |a https://ir.uitm.edu.my/id/eprint/31335/1/31335.pdf | ||
520 | |a In recent years, owing to its unique properties, ZnO has been researched extensively for a wide range of applications including sensors, transistors and solar cells. In this work, ZnO thin film doped with sodium (ZnO:Na) was characterized using Field Emission-Scanning Electron Microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDX). The FESEM image of the ZnO:Na film implies crystal growth at different orientations. The surface composition of the ZnO :Na film with approximately 350 nm thickness was investigated by EDX as a function of accelerating voltage ranging from 5 kV to 15 kV. The EDX spectra revealed that 7 kV is the most appropriate accelerating voltage for extracting elemental composition of the ZnO:Na films, which exclude the detection of the underlying substrate elements. A rectifying structure made up of P-type ZnO :Na film and N-type tin doped indium oxide (ITO) film showed typical rectifying characteristic. | ||
546 | |a en | ||
690 | |a Temperature | ||
690 | |a T Technology (General) | ||
690 | |a TP Chemical technology | ||
655 | 7 | |a Article |2 local | |
655 | 7 | |a PeerReviewed |2 local | |
787 | 0 | |n https://ir.uitm.edu.my/id/eprint/31335/ | |
856 | 4 | 1 | |u https://ir.uitm.edu.my/id/eprint/31335/ |z Link Metadata |