Investigation on the effect of current density on porous GaN fabricated by UV-assisted electrochemical etching / Nurul Syuhadah Mohd Razali ...[et al.]
This paper reported the anodization of porous GaN by UV-assisted electrochemical etching with a usage of lower power of UV light in an electrolyte that consist of 4% potassium hydroxide (KOH) with a variations of applied current density (20, 30 and 40 mA/cm2 ). Field Emission Scanning Electron Micro...
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Universiti Teknologi MARA,
2021-04.
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