Electrical properties and morphology microscopy of palladium (Pd) Schottky contact on P-type GaN / C. K. Tan ... [et al.]

• Autori principali: Tan, C. K. (Autore), Yam, F. K. (Autore), Lim, C. W. (Autore), A., Abdul. Aziz (Autore), Z., Hassan (Autore)
• Natura: Libro
• Pubblicazione: 2004.
• Soggetti: Conference or Workshop Item; PeerReviewed
• Accesso online: Link Metadata

In this paper, we present the electrical, thermal, and morphological characteristics of Pd contacts to 'Mg-doped p-type GaN grown on sapphire substrate. Different annealing temperatures (300700°C) were investigated, as thermally stable metal-semiconductor contacts are essential for high quality...