Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.]

Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.]

In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact r...

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Main Authors: Lim, C. W. (Author), Yam, F.K (Author), Tan, C.K (Author), A., Abdul Aziz (Author), Z., Hassan (Author)
Format: Book
Published: 2004.
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Summary:In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact resistivity using transmission Line Method (TLM) and current voltage (J-V) measurements were investigated. The minimum specific contact resistivity of 3.9 Qcm2 achieved after annealing at SOODC for 6 minutes. Changes in tile surface morphology off the contacts were observed using Scanning Electron Microscopy (SEM).
Item Description:https://ir.uitm.edu.my/id/eprint/51193/1/51193.PDF

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