Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.]
In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact r...
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| Format: | Book |
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2004.
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| 001 | repouitm_51193 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Lim, C. W. |e author |
| 700 | 1 | 0 | |a Yam, F.K. |e author |
| 700 | 1 | 0 | |a Tan, C.K. |e author |
| 700 | 1 | 0 | |a A., Abdul Aziz |e author |
| 700 | 1 | 0 | |a Z., Hassan |e author |
| 245 | 0 | 0 | |a Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.] |
| 260 | |c 2004. | ||
| 500 | |a https://ir.uitm.edu.my/id/eprint/51193/1/51193.PDF | ||
| 520 | |a In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact resistivity using transmission Line Method (TLM) and current voltage (J-V) measurements were investigated. The minimum specific contact resistivity of 3.9 Qcm2 achieved after annealing at SOODC for 6 minutes. Changes in tile surface morphology off the contacts were observed using Scanning Electron Microscopy (SEM). | ||
| 546 | |a en | ||
| 690 | |a Temperature | ||
| 690 | |a Electron | ||
| 690 | |a Electronics | ||
| 655 | 7 | |a Conference or Workshop Item |2 local | |
| 655 | 7 | |a PeerReviewed |2 local | |
| 787 | 0 | |n https://ir.uitm.edu.my/id/eprint/51193/ | |
| 856 | 4 | 1 | |u https://ir.uitm.edu.my/id/eprint/51193/ |z Link Metadata |