Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.]
In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact r...
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| Main Authors: | , , , , |
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| Format: | Book |
| Published: |
2004.
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| Online Access: | Link Metadata |
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