Performance of high-k dielectric material for short channel length MOSFET simulated using silvaco TCAD tools / Fatin Antasha Anizam ... [et al.]

• मुख्य लेखकों: Anizam, Fatin Antasha (लेखक), Ismail, Lyly Nyl (लेखक), Sihab, Norsabrina (लेखक), Mohd Sauki, Nur Sa'adah (लेखक)
• स्वरूप: पुस्तक
• प्रकाशित: Universiti Teknologi MARA, 2021-10.
• विषय: Article; PeerReviewed
• ऑनलाइन पहुंच: Link Metadata

Short channel effect (SCE) occur in the MOSFET devices when the oxide layer became thinner, and the gate length become shorter. The purposed of this study is to find a new dielectric and gate material to replace the conventional oxide which is silicon dioxide (SiO2) and polysilicon as gate material....