Characterization and fabrication of 90nm strained silicon PMOS using TCAD silvaco / M. A. Abd Hamid and F. Sulaiman
The paper focuses on the enhancement of conventional 90nm PMOS using graded silicon germanium layer (SiGe) within the channel and bulk of semiconductor. The performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. A process simulation of Strained Silicon PMOS an...
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UiTM Press,
2012-06.
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