Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]
In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping co...
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| Format: | Book |
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Universiti Teknologi MARA, Pulau Pinang,
2022-09.
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| LEADER | 00000 am a22000003u 4500 | ||
|---|---|---|---|
| 001 | repouitm_68013 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Azmi, Azila |e author |
| 700 | 1 | 0 | |a Abd Rahim, Alhan Farhanah |e author |
| 700 | 1 | 0 | |a Mohd Razali, Nor Shafika |e author |
| 700 | 1 | 0 | |a Radzali, Rosfariza |e author |
| 700 | 1 | 0 | |a Mahmood, Ainorkhilah |e author |
| 700 | 1 | 0 | |a Hamzah, Irni Hamiza |e author |
| 700 | 1 | 0 | |a Abdullah, Mohd Hanapiah |e author |
| 700 | 1 | 0 | |a Mohamed, Mohamed Fauzi Packeer |e author |
| 245 | 0 | 0 | |a Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.] |
| 260 | |b Universiti Teknologi MARA, Pulau Pinang, |c 2022-09. | ||
| 500 | |a https://ir.uitm.edu.my/id/eprint/68013/1/68013.pdf | ||
| 520 | |a In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping concentration of ZnO on the silicon substrate as a photodetector device. There are three different thicknesses of ZnO (0.5 μm ,1 μm and 2 μm) and four different doping concentrations of ZnO applied (1x1015 cm-3, 1x1019 cm-3, 1x1020 cm-3 and 1x1021 cm-3). The performance of the ZnO on Si as a photodetector was evaluated by dark and photo current-voltage (I-V) characteristics. It was found that the optimum thickness of ZnO is at 1 μm and the suitable doping concentration of ZnO is at 1x1021 cm-3 since with these values, the photocurrent response is high, and in spectral response, the peak value for both is depicted in a visible region, which is suitable as UV photodetector device criteria. | ||
| 546 | |a en | ||
| 690 | |a TK Electrical engineering. Electronics. Nuclear engineering | ||
| 690 | |a Electronics | ||
| 690 | |a Pattern recognition systems | ||
| 690 | |a Photoelectronic devices (General) | ||
| 655 | 7 | |a Article |2 local | |
| 655 | 7 | |a PeerReviewed |2 local | |
| 787 | 0 | |n https://ir.uitm.edu.my/id/eprint/68013/ | |
| 787 | 0 | |n https://uppp.uitm.edu.my | |
| 856 | 4 | 1 | |u https://ir.uitm.edu.my/id/eprint/68013/ |z Link Metadata |