OPTIMASI PROSES ETSA LAPISAN TIPIS Cu2ZnSnS4 HASIL FABRIKASI NON-VAKUM UNTUK APLIKASI SEL SURYA

• Main Author: Gema Refantero, - (Author)
• Format: Book
• Published: 2019-08-30.
• Subjects: Thesis; NonPeerReviewed
• Online Access: Link Metadata

Summary

Sel surya lapisan tipis berbasis material kasterit Cu2ZnSnS4 (CZTS) merupakan salah satu sel surya prospektif generasi ke tiga pengganti material komersial Cu(Inx,Ga1-x)S2 (CIGS). Namun demikian, substitusi material langka In dan Ga oleh Zn dan Sn masih memerlukan optimasi fabrikasi lebih lanjut. Karakteristik elektronik dan optiknya perlu ditingkatkan sehingga sel surya ini mencapai standar efisiensi fabrikasi komersial yaitu 10%, dan bad gap 1.15 eV. Pada penelitian ini, investigasi proses etsa dilakukan menggunakan HCl 5% dengan optimasi waktu etsa 0, 100, 300, 480, dan 600 detik pada fabrikasi non-vakum material kasterit Cu2ZnSnS4. Material ini bekerja sebagai semikonduktor tipe p pada sel surya lapisan tipis yang dideposisi dengan metode spin coating dengan struktur standar Mo/Cu2ZnSnS4/CdS/AZO/Ag. Karakterisasi dilakukan dengan pengujian X-Ray Diffraction (XRD), Scanning Electron Microscope-Energy Dispersive X-Ray Spectroscopy (SEM-EDX), Spektroskopi Uv-Vis, Analisis Tauc-Plot, dan Karakteristik I-V. Hasil penelitian diperoleh bahwa pemberian perlakuan etsa menggunakan HCl 5% pada lapisan CZTS berhasil menurunkan persentase massa fase sekunder ZnS sebesar 35.7% pada pemberian perlakuan etsa nHCl 5% hingga 600 detik. hasil terbaik lapisan absorber CZTS terdapat pada sampel dengan pemberian etsa HCl 5% selama 300 detik, dengan memiliki Light Harvesiting Effeciency (LHE) sebesar 95.2% dengan band gap 1.76 eV. Kata Kunci: Sel Surya, Lapisan tipis, Material Cu2ZnSnS4, Etsa, HCl, Fabrikasi Non-vakum Thin film solar cell based on kesterite material Cu2ZnSnS4 (CZTS) is one of the third generation prospective solar cells replacing commercial Cu(Inx,Ga1-x)S2 (CIGS) material. However, the substitution of rare In and Ga material by Zn and Sn still requires further fabrication optimization. Its electronic and optical characteristics need to be improved so that this solar cell reaches a commercial fabrication efficiency standard of 10%, and a 1.15 eV bad gap. In this study, the etching process was investigated using 5% HCl with an etching time of 0, 100, 300, 480, and 600 seconds in the non-vacuum fabrication of Cu2ZnSnS4 kesterite. This material works as a p type semiconductor in thin layer solar cells deposited by the spin coating method with a standard structure of Mo / Cu2ZnSnS4 / CdS / AZO / Ag. Characterization was carried out by X-Ray Diffraction (XRD) testing, Scanning Electron Microscope-Energy Dispersive X-Ray Spectroscopy (SEM-EDX), Uv-Vis Spectroscopy, Tauc-Plot Analysis, and I-V Characteristics. The results showed that application of etching treatment using 5% HCl in the CZTS layer succeeded in reducing the percentage of ZnS secondary phase mass by 35.7% for the application of etching HCl 5% for 600 seconds. the best results of the CZTS absorber layer were found in samples by etching 5% HCl for 300 seconds, by having a Light Harvesiting Effeciency (LHE) of 95.2% with a band gap of 1.76 eV. Keywords: Solar cell, Thin film, Cu2ZnSnS4 materials, Etching, HCl, Non-vacuum fabrication

Item Description

http://repository.upi.edu/41657/6/S_FIS_1503595_Title.pdf
http://repository.upi.edu/41657/1/S_FIS_1503595_Chapter1.pdf
http://repository.upi.edu/41657/5/S_FIS_1503595_Chapter2.pdf
http://repository.upi.edu/41657/7/S_FIS_1503595_Chapter3.pdf
http://repository.upi.edu/41657/2/S_FIS_1503595_Chapter4.pdf
http://repository.upi.edu/41657/4/S_FIS_1503595_Chapter5.pdf
http://repository.upi.edu/41657/3/S_FIS_1503595_Appendix.pdf