KARAKTERISTIK TRANSISTOR EFEK MEDAN TEROBOSAN MULTILAYER ARMCHAIR GRAPHENE NANORIBBON MELALUI ANALISIS CUT-OFF FREQUENCY MENGGUNAKAN PENDEKATAN FUNGSI AIRY - Taufik Syah Mauludin, - (2023)
Graphene nanoribbon dengan lebar celah pita energi yang dapat disesuaikan oleh lebarnya sangat menguntungkan untuk aplikasi tunneling field-effect transistor (TFET). Graphene nanoribbon merupakan material yang terbuat dari atom karbon yang tersusun secara heksagonal menyerupai sarang lebah dan memiliki lebar terbatas. Cut-off frequency sebagai karakteristik TFET menunjukan bahwa transistor memiliki keuntungan dalam pengembangan perangkat dengan energi rendah dan frekuensi tinggi. Penelitian ini memodelkan cut-off frequency pada TFET multilayer armchair graphene nanoribbon (AGNR) menggunakan pendekatan fungsi Airy. Perhitungan diselesaikan secara numerik melalui komputasi pemrograman menggunakan Wolfram Mathematica. Profil potensial TFET dihitung menggunakan pendekatan fungsi Airy untuk menghasilkan transmitansi. Transmitansi digunakan untuk menentukan arus terobosan dari persamaan Landauer dengan bantuan metode Gauss-Legendre quadrature. Arus terobosan digunakan untuk menghitung cut-off frequency. Hasil penelitian menunjukkan bahwa cut-off frequency meningkat seiring meningkatnya tegangan gate hingga mencapai nilai maksimum lalu menurun kembali. Semakin meningkat tegangan drain dan ketebalan oksida, maka semakin meningkat pula nilai cut-off frequency. Sebaliknya, semakin meningkat panjang channel, lebar multilayer graphene nanoribbon, dan temperatur, maka semakin menurun nilai cut-off frequency. Perbedaan lapisan pada AGNR mempengaruhi performa perangkat TFET. Trilayer AGNR TFET menunjukkan hasil cut-off frequency yang lebih tinggi dibandingkan dengan bilayer AGNR dan monolayer AGNR. Graphene nanoribbon with a width-adjustable energy bandgap is very advantageous for tunneling field-effect transistor (TFET) applications. Graphene nanoribbon is a material made of carbon atoms arranged hexagonally resembling a honeycomb and has a limited width. The cut-off frequency as a TFET characteristic shows that the transistor has an advantage in developing low-energy and high-frequency devices. This study modeled the cut-off frequency of multilayer armchair graphene nanoribbon (AGNR) TFET using Airy function approach. Calculations are solved numerically through computational programming using Wolfram Mathematica. The TFET potential profile is calculated using Airy function approach to produce the transmittance. The transmittance is used to determine the tunneling current from the Landauer equation with the help of the Gauss-Legendre quadrature method. The tunneling current is used to calculate the cut-off frequency. The results show that the cut-off frequency increases with increasing gate voltage until it reaches a maximum value and then decreases again. As the drain voltage and oxide thickness increase, the cut-off frequency value also increases. Conversely, the increase in channel length, width of multilayer graphene nanoribbon, and temperature decrease the value of the cut-off frequency. Layer differences in AGNR affect the performance of TFET devices. The trilayer AGNR TFET shows a higher cut-off frequency than the bilayer AGNR and monolayer AGNR.