STUDI AWAL PEMBUATAN FOTOKONDUKTOR ULTRAVIOLET (UV) BERSTRUKTUR Al/n-GaN
Telah berhasil dilakukan pembuatan dan karakterisasi fotokonduktor berstruktur Al/n-GaN dimana untuk pembentukan kontak metal-semikonduktor menggunakan metode fotolithographic. Hasil pengukuran responsivitas, menunjukkan bahwa fotokonduktor cukup peka terhadap sinar dengan panjang gelombang antara 3...
Saved in:
Main Author: | R Zia Mulyawan, - (Author) |
---|---|
Format: | Book |
Published: |
2008-08-22.
|
Subjects: | |
Online Access: | Link Metadata |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
STUDI AWAL PEMBUATAN FOTOKONDUKTOR ULTRAVIOLET (UV) BERSTRUKTUR Al/n-GaN
by: R Zia Mulyawan, -
Published: (2008) -
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
by: Kühn, Jutta
Published: (2011) -
Investigation on the effect of current density on porous GaN fabricated by UV-assisted electrochemical etching / Nurul Syuhadah Mohd Razali ...[et al.]
by: Mohd Razali, Nurul Syuhadah, et al.
Published: (2021) -
Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.]
by: Lim, C. W., et al.
Published: (2004) -
Electrical properties and morphology microscopy of palladium (Pd) Schottky contact on P-type GaN / C. K. Tan ... [et al.]
by: Tan, C. K., et al.
Published: (2004)