Search Results - 1941年~

Zwischen den Zeiten. Einblicke in Werk und Rezeption Anton Čechovs. Gerhard Ressel zum 65. Geburtstag

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Educated Youth and the Cultural Revolution in China by Singer, Martin

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Chinese Communist Materials at the Bureau of Investigation Archives, Taiwan by Donovan, Peter

“…mpub.19217…”
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Chinese Domestic Politics and Foreign Policy in the 1970s by Whiting, Allen S.

“…mpub.19213…”
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Solar Module Packaging Polymeric Requirements and Selection by Poliskie, Michelle

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Arbeitsmarktmobilitaet in hoeherem Lebensalter Eine empirische Untersuchung gelungener betrieblicher Wechsel und Reintegrationen by Kattein, Martina

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"Proletarian Hegemony" in the Chinese Revolution and the Canton Commune of 1927 by Thomas, S. Bernard

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Chapter Address-Event Based Stereo Vision with Bio-Inspired Silicon Retina Imagers by Kogler, Jürgen

“…12941…”
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Solar Module Packaging Polymeric Requirements and Selection by Poliskie, Michelle

“…b10941…”
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Educated Youth and the Cultural Revolution in China by Singer, Martin

“…mpub.19144…”
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Chinese Communist Materials at the Bureau of Investigation Archives, Taiwan by Donovan, Peter

“…mpub.19217…”
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Chinese Domestic Politics and Foreign Policy in the 1970s by Whiting, Allen S.

“…mpub.19213…”
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Bibliothek und Medien 33 (2013). Nr. 2

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Zwischen den Zeiten. Einblicke in Werk und Rezeption Anton Čechovs. Gerhard Ressel zum 65. Geburtstag

“…b11941…”
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Arbeitsmarktmobilitaet in hoeherem Lebensalter Eine empirische Untersuchung gelungener betrieblicher Wechsel und Reintegrationen by Kattein, Martina

“…b14916…”
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"Proletarian Hegemony" in the Chinese Revolution and the Canton Commune of 1927 by Thomas, S. Bernard

“…mpub.19012…”
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Chapter Address-Event Based Stereo Vision with Bio-Inspired Silicon Retina Imagers by Kogler, Jürgen

“…12941…”
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Advancing Culture of Living with Landslides Volume 1 ISDR-ICL Sendai Partnerships 2015-2025 /

Table of Contents: “…Landslide Risk Reduction in Croatia: Scientific research in the framework of the WCoE 2014-2017, IPL-173, IPL-184, ICL ABN -- Shapes and Mechanisms of Large-scale Landslides in Japan: Forecasting Analysis from an Inventory (WCoE 2014-2017 -- Retrospective and Prospects for Cold Regions Landslide Research (2012-2016) (WCoE 2014-2017, IPL-132, IPL-167, IPL-203, CRLN -- Large-scale Rockslide Inventories: from the Kokomeren River Basin to the Entire Central Asia Region (WCoE 2014-2017, IPL-106-2) -- Interventions for Promoting Knowledge, Innovations and Landslide Risk Management Practices within South and Southeast Asia (WCoE 2014-2017) -- Promoting a Global Standard for Community-based Landslide Early Warning Systems (WCoE 2014-2017, IPL-158, IPL-165) -- Model Policy Frameworks, Standards and Guidelines on Landslide Disaster Reduction (WCoE 2014-2017) -- Landslide Hazard and Risk Management (WCoE 2014-2017) -- Mitigation of Landslide Hazards in Ukraine under the Guidance of ICL: 2009-2016 (IPL-153, IPL-191) -- Development of a Hazard Evaluation Technique for Earthquake-Induced Landslides Based on an Analytic Hierarchy Process (AHP) (IPL-154) -- The Croatian-Japanese SATREPS Joint Research Project on Landslides (IPL-161).…”
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Semiconductor Devices Theory and Application by Fiore, James M.

Table of Contents: “…Chapter 1: Semiconductor Fundamentals -- 1.0 Chapter Objectives -- 1.1 Introduction -- 1.2 Atomic Structure -- 1.3 Crystals -- 1.4 Doped Materials -- Summary -- Chapter 2: PN Junctions and Diodes -- 2.0 Chapter Objectives -- 2.1 Introduction -- 2.2 The PN Junction -- 2.3 Diode Data Sheet Interpretation -- 2.4 Diode Circuit Models -- 2.5 Other Types of Diodes -- Summary -- Chapter 3: Diode Applications -- 3.0 Chapter Objectives -- 3.1 Introduction -- 3.2 Rectification -- 3.3 Clippers -- 3.4 Clampers -- Summary -- Chapter 4: Bipolar Junction Transistors (BJTs) -- 4.0 Chapter Objectives -- 4.1 Introduction -- 4.2 The Bipolar Junction Transistor -- 4.3 BJT Collector Curves -- 4.4 BJT Data Sheet Interpretation -- 4.5 Ebers-Moll Model -- 4.6 DC Load Lines -- 4.7 BJT Switching and Driver Applications -- Summary -- Chapter 5: BJT Biasing -- 5.0 Chapter Objectives -- 5.1 Introduction -- 5.2 The Need For Biasing -- 5.3 Two-Supply Emitter Bias -- 5.4 Voltage Divider Bias -- 5.5 Feedback Biasing -- Summary -- Chapter 6: Amplifier Concepts -- 6.0 Chapter Objectives -- 6.1 Introduction -- 6.2 Amplifier Model -- 6.3 Compliance and Distortion -- 6.4 Frequency Response and Noise -- 6.5 Miller's Theorem -- Summary -- Chapter 7: BJT Small Signal Amplifiers -- 7.0 Chapter Objectives -- 7.1 Introduction -- 7.2 Simplified AC Model of the BJT -- 7.3 Common Emitter Amplifier -- 7.4 Common Collector Amplifier -- 7.5 Common Base Amplifier -- 7.6 Multi-Stage Amplifiers -- Summary -- Chapter 8: BJT Class A Power Amplifiers -- 8.0 Chapter Objectives -- 8.1 Introduction -- 8.2 Amplifier Classes -- 8.3 Class A Operation and Load Lines -- 8.4 Loudspeakers -- 8.5 Power Transistor Data Sheet Interpretation -- 8.6 Heat Sinks -- Summary -- Chapter 9: BJT Class B Power Amplifiers -- 9.0 Chapter Objectives -- 9.1 Introduction -- 9.2 The Class B Configuration -- 9.3 Extensions and Refinements -- Summary -- Chapter 10: Junction Field Effect Transistors (JFETs) -- 10.0 Chapter Objectives -- 10.1 Introduction -- 10.2 JFET Internals -- 10.3 JFET Data Sheet Interpretation -- 10.4 JFET Biasing -- Summary -- Chapter 11: JFET Small Signal Amplifiers -- 11.0 Chapter Objectives -- 11.1 Introduction -- 11.2 Simplified AC Model of the JFET -- 11.3 Common Source Amplifier -- 11.4 Common Drain Amplifier -- 11.5 Multi-stage and Combination Circuits -- 11.6 Ohmic Region Operation -- Summary -- Chapter 12: Metal Oxide Semiconductor FETs (MOSFETs) -- 12.0 Chapter Objectives -- 12.1 Introduction -- 12.2 The DE-MOSFET -- 12.3 DE-MOSFET Biasing -- 12.4 The E-MOSFET -- 12.5 E-MOSFET Data Sheet Interpretation -- 12.6 E-MOSFET Biasing -- Summary -- Chapter 13: MOSFET Small Signal Amplifiers -- 13.0 Chapter Objectives -- 13.1 Introduction -- 13.2 MOSFET Common Source Amplifiers -- 13.3 MOSFET Common Drain Followers -- Summary -- Chapter 14: Class D Power Amplifiers -- 14.0 Chapter Objectives -- 14.1 Introduction -- 14.2 Class D Basics -- 14.3 Pulse Width Modulation -- 14.4 Output Configurations -- Summary -- Chapter 15: Insulated Gate Bipolar Transistors (IGBTs) -- 15.0 Chapter Objectives -- 15.1 Introduction -- 15.2 IGBT Internals -- 15.3 IGBT Data Sheet Interpretation -- 15.4 IGBT Applications -- Summary…”
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Les travaux du Haut comité consultatif de la population et de la famille Travaux et documents

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