Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices

• Andere auteurs: Žukauskaitė, Agnė (Redacteur)
• Formaat: Elektronisch Hoofdstuk
• Taal: Engels
• Gepubliceerd in: Basel MDPI - Multidisciplinary Digital Publishing Institute 2023
• Onderwerpen: Research & information: general; Physics; AlN; AlScN; aluminum nitride; aluminum scandium nitride; micromirror; microscanner; piezoelectric; aluminium scandium nitride; piezoelectric thin films; MEMS; non-metallic substrates; scandium-doped aluminum nitride; ferroelectric; substrate-RF; residual stress; coercive field; leakage current; high temperature; nonvolatile memory; retention; fatigue; wurtzite; film; sputter deposition; scandium-aluminum nitride; Lamb-wave resonators; complementary switchable; SAW devices; piezoelectricity; ScAlN thin film; diamond thin film; 5G technology; electromechanical coupling coefficient k2; Q-factor; aluminum scandium nitride (AlScN); aluminum nitride (AlN); wet etch; potassium hydroxide (KOH); physical vapor deposition; stress; stress gradient; fabrication; cantilever beams; thermal stability; structure analysis; X-ray diffraction; ferroelectrics; thin film; PUND test; laser ultrasound; surface acoustic waves; magnetron sputter epitaxy; elastic properties; thin films; piezoelectric films; Raman spectroscopy; alloy scattering; temperature coefficient; n/a
• Online toegang: DOAB: download the publication; DOAB: description of the publication

Recently, aluminium scandium nitride (AlScN) emerged as a material with superior properties compared to aluminium nitride (AlN). Substituting Al with Sc in AlN leads to a dramatic increase in the piezoelectric coefficient as well as in electromechanical coupling. This discovery finally allowed us to...