Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors

• Muut tekijät: Wang, Zeheng (Toimittaja), Huang, Jingkai (Toimittaja)
• Aineistotyyppi: Elektroninen Kirjan osa
• Kieli: englanti
• Julkaistu: Basel MDPI - Multidisciplinary Digital Publishing Institute 2023
• Aiheet: Technology: general issues; History of engineering & technology; Energy industries & utilities; derating; DC-DC converter; eGaN; PoL; conductive polymer tantalum chip capacitor; reliability; MTBF; quartz flexible accelerometer; electric field coupling noise; lock-in amplifier circuit; AlGaN/GaN; high-electron-mobility transistor; passivation; HfO2; power clamp circuit; ESD; HBM; false trigger; bulk electron accumulation (BEA); extended superjunction trench gate; extended drain (ED); BV and Ron,sp; fluorides; diamond; ultrashort-pulse laser; direct laser inscription; photoluminescent microbits; vacancy clusters; Micro-LED; metasurface; light extraction efficiency; angular deflection; polarization; a-IGZO; magnetron sputtering; thin-film transistors; oxygen vacancy; oxygen flow rate; band-to-band tunneling (BTBT); linear energy transfer value (LET); single-particle irradiation effect; anti-irradiation optimization; GaN; high electron mobility transistors; nanochannel; tri-gate; dual-gate; n/a
• Linkit: DOAB: download the publication; DOAB: description of the publication

This essential collection, edited by Dr. Zeheng Wang and Dr. Jing-Kai Huang, unveils the latest advancements in semiconductor technology that are considered to be the cornerstone of the modern digital era. Spanning cutting-edge research in semiconductor materials, devices, and systems, this reprint...