Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

• Muut tekijät: Kumar Sharma, Yogesh (Toimittaja)
• Aineistotyyppi: Elektroninen Kirjan osa
• Kieli: englanti
• Julkaistu: IntechOpen 2018
• Aiheet: Circuits & components; reliability, sintering, electric vehicles, diamond, wireless power transfer
• Linkit: DOAB: download the publication; DOAB: description of the publication

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a...