Strain-Engineered MOSFETs

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their f...

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書誌詳細
第一著者: Maiti, C.K (auth)
その他の著者: Maiti, T.K (auth)
フォーマット: 電子媒体 図書の章
言語:英語
出版事項: CRC Press 2012
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その他の書誌記述
要約:This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
ISBN:9781315216577
9781466503472
9781138075603
9781466500556
アクセス:Open Access