Strain-Engineered MOSFETs
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their f...
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| フォーマット: | 電子媒体 図書の章 |
| 言語: | 英語 |
| 出版事項: |
CRC Press
2012
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| 主題: | |
| オンライン･アクセス: | DOAB: download the publication DOAB: description of the publication |
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| 要約: | This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization. |
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| ISBN: | 9781315216577 9781466503472 9781138075603 9781466500556 |
| アクセス: | Open Access |