Strain-Engineered MOSFETs

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their f...

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Xehetasun bibliografikoak
Egile nagusia: Maiti, C.K (auth)
Beste egile batzuk: Maiti, T.K (auth)
Formatua: Baliabide elektronikoa Liburu kapitulua
Hizkuntza:ingelesa
Argitaratua: CRC Press 2012
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DOAB: description of the publication
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Gaia:This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
ISBN:9781315216577
9781466503472
9781138075603
9781466500556
Sartu:Open Access