Strain-Engineered MOSFETs
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their f...
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| Hoofdauteur: | |
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| Andere auteurs: | |
| Formaat: | Elektronisch Hoofdstuk |
| Taal: | Engels |
| Gepubliceerd in: |
CRC Press
2012
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| Onderwerpen: | |
| Online toegang: | DOAB: download the publication DOAB: description of the publication |
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Internet
DOAB: download the publicationDOAB: description of the publication
3rd Floor Main Library
| Plaatsingsnummer: |
A1234.567 |
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| Kopie 1 | Beschikbaar |