AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...

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Bibliographic Details
Main Author: Kühn, Jutta (auth)
Format: Electronic Book Chapter
Language:English
Published: KIT Scientific Publishing 2011
Series:Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
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