AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

• Päätekijä: Kühn, Jutta (auth)
• Aineistotyyppi: Elektroninen Kirjan osa
• Kieli: englanti
• Julkaistu: KIT Scientific Publishing 2011
• Sarja: Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
• Aiheet: Technology: general issues; MMIC design; power amplifier; AlGaN/GaN HEMT; X-band; power-added efficiency
• Linkit: DOAB: download the publication; DOAB: description of the publication

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...