AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...
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| 1. autor: | |
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| Format: | Elektroniczne Rozdział |
| Język: | angielski |
| Wydane: |
KIT Scientific Publishing
2011
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| Seria: | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
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| Hasła przedmiotowe: | |
| Dostęp online: | DOAB: download the publication DOAB: description of the publication |
| Etykiety: |
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| Streszczenie: | This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. |
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| Opis fizyczny: | 1 electronic resource (XI, 230 p. p.) |
| ISBN: | KSP/1000021579 9783866446151 |
| Ograniczenie dostępu: | Open Access |