AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...
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| Main Author: | |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
KIT Scientific Publishing
2011
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| Series: | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
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| Subjects: | |
| Online Access: | DOAB: download the publication DOAB: description of the publication |
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