Miniaturized Transistors

• Autor principal: Grasser, Tibor (auth)
• Otros Autores: Filipovic, Lado (auth)
• Formato: Electrónico Capítulo de libro
• Lenguaje: inglés
• Publicado: MDPI - Multidisciplinary Digital Publishing Institute 2019
• Materias: History of engineering & technology; MOSFET; n/a; total ionizing dose (TID); low power consumption; process simulation; two-dimensional material; negative-capacitance; power consumption; technology computer aided design (TCAD); thin-film transistors (TFTs); band-to-band tunneling (BTBT); nanowires; inversion channel; metal oxide semiconductor field effect transistor (MOSFET); spike-timing-dependent plasticity (STDP); field effect transistor; segregation; systematic variations; Sentaurus TCAD; indium selenide; nanosheets; technology computer-aided design (TCAD); high-? dielectric; subthreshold bias range; statistical variations; fin field effect transistor (FinFET); compact models; non-equilibrium Green's function; etching simulation; highly miniaturized transistor structure; compact model; silicon nanowire; surface potential; Silicon-Germanium source/drain (SiGe S/D); nanowire; plasma-aided molecular beam epitaxy (MBE); phonon scattering; mobility; silicon-on-insulator; drain engineered; device simulation; variability; semi-floating gate; synaptic transistor; neuromorphic system; theoretical model; CMOS; ferroelectrics; tunnel field-effect transistor (TFET); SiGe; metal gate granularity; buried channel; ON-state; bulk NMOS devices; ambipolar; piezoelectrics; tunnel field effect transistor (TFET); FinFETs; polarization; field-effect transistor; line edge roughness; random discrete dopants; radiation hardened by design (RHBD); low energy; flux calculation; doping incorporation; low voltage; topography simulation; MOS devices; low-frequency noise; high-k; layout; level set; process variations; subthreshold; metal gate stack; electrostatic discharge (ESD)
• Acceso en línea: DOAB: download the publication; DOAB: description of the publication

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design make...