Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich
The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative couple...
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Format: | Elektronski Book Chapter |
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KIT Scientific Publishing
2013
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Serija: | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
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Teme: | |
Online dostop: | DOAB: download the publication DOAB: description of the publication |
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Internet
DOAB: download the publicationDOAB: description of the publication
3rd Floor Main Library
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A1234.567 |
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Kopija 1 | Prosto |