Wide Bandgap Semiconductor Based Micro/Nano Devices

• Auteur principal: Seo, Jung-Hun (auth)
• Format: Électronique Chapitre de livre
• Langue: anglais
• Publié: MDPI - Multidisciplinary Digital Publishing Institute 2019
• Sujets: History of engineering & technology; ohmic contact; n/a; MESFET; optical band gap; wide-bandgap semiconductor; annealing temperature; junction termination extension (JTE); channel length modulation; silicon carbide (SiC); amorphous InGaZnO (a-IGZO); light output power; GaN; electrochromism; large signal performance; passivation layer; 4H-SiC; positive gate bias stress (PGBS); asymmetric power combining; ultrahigh upper gate height; high electron mobility transistors; space application; gallium nitride (GaN); phase balance; edge termination; distributed Bragg reflector; cathode field plate (CFP); ammonothermal GaN; anode field plate (AFP); W band; GaN high electron mobility transistor (HEMT); 1T DRAM; growth of GaN; tungsten trioxide film; thin-film transistor (TFT); micron-sized patterned sapphire substrate; power added efficiency; T-anode; analytical model; AlGaN/GaN; harsh environment; high-temperature operation; amplitude balance; buffer layer; characteristic length; Ku-band; DIBL effect; I-V kink effect; flip-chip light-emitting diodes; high electron mobility transistors (HEMTs); power amplifier; sidewall GaN; external quantum efficiency; breakdown voltage (BV); threshold voltage (Vth) stability; regrown contact; AlGaN/GaN HEMT; TCAD; high electron mobility transistor (HEMT)
• Accès en ligne: DOAB: download the publication; DOAB: description of the publication

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key...