Physics and Technology of Silicon Carbide Devices
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for materia...
में बचाया:
अन्य लेखक: | Hijikata, Yasuto (संपादक) |
---|---|
स्वरूप: | इलेक्ट्रोनिक पुस्तक अध्याय |
भाषा: | अंग्रेज़ी |
प्रकाशित: |
IntechOpen
2012
|
विषय: | |
ऑनलाइन पहुंच: | DOAB: download the publication DOAB: description of the publication |
टैग: |
टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
|
समान संसाधन
-
Tungsten Carbide Processing and Applications
प्रकाशित: (2012) -
Crystallization Science and Technology
प्रकाशित: (2012) -
Superconductors Properties, Technology, and Applications
प्रकाशित: (2012) -
Infrared Spectroscopy Materials Science, Engineering and Technology
प्रकाशित: (2012) -
Advances in Crystallization Processes
प्रकाशित: (2012)