Nanowire Field-Effect Transistor (FET)

• Other Authors: García-Loureiro, Antonio (Editor), Kalna, Karol (Editor), Seoane, Natalia (Editor)
• Format: Electronic Book Chapter
• Language: English
• Published: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
• Subjects: History of engineering & technology; random dopant; drift-diffusion; variability; device simulation; nanodevice; screening; Coulomb interaction; III-V; TASE; MOSFETs; Integration; nanowire field-effect transistors; silicon nanomaterials; charge transport; one-dimensional multi-subband scattering models; Kubo-Greenwood formalism; schrödinger-poisson solvers; DC and AC characteristic fluctuations; gate-all-around; nanowire; work function fluctuation; aspect ratio of channel cross-section; timing fluctuation; noise margin fluctuation; power fluctuation; CMOS circuit; statistical device simulation; variability effects; Monte Carlo; Schrödinger based quantum corrections; quantum modeling; nonequilibrium Green's function; nanowire transistor; electron-phonon interaction; phonon-phonon interaction; self-consistent Born approximation; lowest order approximation; Padé approximants; Richardson extrapolation; ZnO; field effect transistor; conduction mechanism; metal gate; material properties; fabrication; modelling; nanojunction; constriction; quantum electron transport; quantum confinement; dimensionality reduction; stochastic Schrödinger equations; geometric correlations; silicon nanowires; nano-transistors; quantum transport; hot electrons; self-cooling; nano-cooling; thermoelectricity; heat equation; non-equilibrium Green functions; power dissipation
• Online Access: DOAB: download the publication; DOAB: description of the publication

In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumpt...