Nanowire Field-Effect Transistor (FET)

In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumpt...

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Bibliographic Details
Other Authors: García-Loureiro, Antonio (Editor), Kalna, Karol (Editor), Seoane, Natalia (Editor)
Format: Electronic Book Chapter
Language:English
Published: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
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Summary:In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
Physical Description:1 electronic resource (96 p.)
ISBN:books978-3-03936-209-7
9783039362080
9783039362097
Access:Open Access