Advances in Porous Semiconductor Research
Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties fo...
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Otros Autores: | , |
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Formato: | Electrónico Capítulo de libro |
Lenguaje: | inglés |
Publicado: |
Frontiers Media SA
2020
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Materias: | |
Acceso en línea: | DOAB: download the publication DOAB: description of the publication |
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Número de Clasificación: |
A1234.567 |
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