Wide Bandgap Based Devices Design, Fabrication and Applications

• Kolejni autorzy: Medjdoub, Farid (Redaktor)
• Format: Elektroniczne Rozdział
• Język: angielski
• Wydane: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
• Hasła przedmiotowe: Technology: general issues; GaN; high-electron-mobility transistor (HEMT); ultra-wide band gap; GaN-based vertical-cavity surface-emitting laser (VCSEL); composition-graded AlxGa1−xN electron blocking layer (EBL); electron leakage; GaN laser diode; distributed feedback (DFB); surface gratings; sidewall gratings; AlGaN/GaN; proton irradiation; time-dependent dielectric breakdown (TDDB); reliability; normally off; power cycle test; SiC micro-heater chip; direct bonded copper (DBC) substrate; Ag sinter paste; wide band-gap (WBG); thermal resistance; amorphous InGaZnO; thin-film transistor; nitrogen-doping; buried-channel; stability; 4H-SiC; turn-off loss; ON-state voltage; breakdown voltage (BV); IGBT; wide-bandgap semiconductor; high electron mobility transistors; vertical gate structure; normally-off operation; gallium nitride; asymmetric multiple quantum wells; barrier thickness; InGaN laser diodes; optical absorption loss; electron leakage current; wide band gap semiconductors; numerical simulation; terahertz Gunn diode; grooved-anode diode; Gallium nitride (GaN) high-electron-mobility transistors (HEMTs); vertical breakdown voltage; buffer trapping effect; gallium nitride (GaN); power switching device; active power filter (APF); power quality (PQ); metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT); recessed gate; double barrier; high-electron-mobility transistors; copper metallization; millimeter wave; wide bandgap semiconductors; flexible devices; silver nanoring; silver nanowire; polyol method; cosolvent; tungsten trioxide film; spin coating; optical band gap; morphology; electrochromism; self-align; hierarchical nanostructures; ZnO nanorod/NiO nanosheet; photon extraction efficiency; photonic emitter; wideband; HEMT; power amplifier; jammer system; GaN 5G; high electron mobility transistors (HEMT); new radio; RF front-end; AESA radars; transmittance; distortions; optimization; GaN-on-GaN; schottky barrier diodes; high-energy α-particle detection; low voltage; thick depletion width detectors; n/a
• Dostęp online: DOAB: download the publication; DOAB: description of the publication

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, f...